주파수 체배기를 이용한 K-Band용 Hair-pin 발진기

A K-band Hair-pin Oscillator Using a Frequency Doubler


초록

본 논문에서는 hair-pin 공진기, GaAs MESFET, 그리고 주파수 체배기로 구성된 K-Band용 발진기가 제안 되며, 하이브리드 초고주파 집적회로(HMIC) 형태로 제작되고 그 마이크로파 동작 특성이 발표된다. $\lambda_g$/4 개방 스터브가 벼ir-pin 공진 발진기의 출력인 9GHz의 기본 주파수를 억제하기 위해 주파수 체배기에서 사 용되며I 출력 정합 회로가 2차 고조파 주파수인 18 GHz에서 최적화된다. 제안된 발진기는 -083dBm의 출력, -23 dBc의 기본 주파수 억압, 그리고 18.2 GHz에서 -86 dBc/Hz의 위상 잡음을 갖는다

In this paper, a K-band oscillator which is composed of a hair-pin resonator, a GaAs MESFET, and a frequency doubler, is suggested, implemented by HMIC(Hybrid Microwave Integrated Circuits) form, and characterized for its microwave performance. A $\lambda_g$/4 open stub is used in frequency doubler to suppress the fundamental frequency of 9 GHz which is the output of the hair-pin resonator oscillator and output matching network is optimized for its second harmonic freuency of 18 HGz. For the oscillator, the output power of -0.83 dBm, the fundamental frequency suppression of -23 dBc, and phase noise of -86 dBc/Hz at 18.20 GHz are obtained.

키워드

참고문헌

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