E2M - 전기 전자와 첨단 소재 (Electrical & Electronic Materials)
- 제11권10호
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- Pages.53-59
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- 1998
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- 2982-6268(pISSN)
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- 2982-6306(eISSN)
Preparation of Paraelectric PLT Thin Films Using Reactive Magnetron Sputtering of Multicomponent Metal Target
- Kim, H.H. (Department of Electrical and Computer Engineering, New Jersey Institute of Technology) ;
- Sohn, K.S.Casas, L.M.Pfeffer, R.L.Lareau, R.T. (Department of Electrical and Computer Engineering, New Jersey Institute of TechnologyArmy Research LaboratoryArmy Research LaboratoryArmy Research Laboratory)
- 발행 : 1998.10.01
초록
Paraelectric lead landthanum titanate(PLT) thin films have been prepared by a reactive dc magnetron sputtering system using a multicomponent metal target. The surface area control of each element on the target markedly facilitates the fabrication of thin films of complex ceramic compounds. A postdeposition heat-treatment was applied to all as-deposited PLT thin films at annealing temperatures up to 75
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