E2M - 전기 전자와 첨단 소재 (Electrical & Electronic Materials)
- 제11권11호
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- Pages.22-27
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- 1998
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- 2982-6268(pISSN)
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- 2982-6306(eISSN)
Fabrication of excimer laser annealed poly-si thin film transistor by using an elevated temperature ion shower doping
- Park, Seung-Chul (Department of materials science and engineering, Korea Advanced Institute of Science & Technology) ;
- Jeon, Duk-Young (Department of materials science and engineering, Korea Advanced Institute of Science & Technology)
- 발행 : 1998.11.01
초록
We have investigated the effect of an ion shower doping of the laser annealed poly-Si films at an elevated substrate temperatures. The substrate temperature was varied from room temperature to 300