한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제11권9호
  • /
  • Pages.700-704
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  • 1998
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  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

Boron 이온이 주입된 GaAs의 열처리에 따른 발광특성에 관한 연구

A Study on the Photoluminescence of Boron lon Implanted GaAs

  • 발행 : 1998.09.01
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초록

In this paper, the optical properties of boron ion implanted GaAs were investigated by photoluminescence(PL) measurements. The implantations were preformed at room temperature with the energy of 150 eV. The range of implanted dose was $10^{12}~10^{15} ions/cm^2$. The boron implanted samples were annealed between $450^{\circ}C$ and $800^{\circ}C$ for 20 minutes. The crystallinity of low dosed samples were increased with increasing annealing temperature up to $700^{\circ}C$ while that of the high dosed($10^{15} ions/cm^2$) was almost same. From the samples with dose of $10^{14}~10^{15} ions/cm^2$, two emission bands were observed at 1.438 eV (B1) and 1.459 eV (B2) after the thermal treatment. These emission bands seems to be attributed to the $B_{Ga}$-defect complex.

키워드

참고문헌

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