한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제11권7호
  • /
  • Pages.552-556
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  • 1998
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

RF 플라즈마 CVD법에 의한 다이아몬드 박막의 합성

Synthesis of Diamond Thin Films by Rf Plasma Assisted Chemical Vapor Deposition

  • 이상희 (인하대학교 공대 전기공학과) ;
  • 이덕출 (인하대학교 공대 전기공학과)
  • 발행 : 1998.07.01
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초록

Diamond thin films were deposited on Si substrate using $CH_4 and H_2$mixed gas by RF plasma CVD. Prior to deposition, the substrate surface was mechanically scratched with the diamond paste of $3{\mu}m$ to improve the density of nucleation sites. The microstructure of diamond films deposited with methane(0.5%~2%) at the reaction pressure ranging from 20 torr to 50torrr were studied by a scanning electron microscope. It was observed in the deposited diamond films that the nucleation density decreased and crystallinity increased with decreasing the methane concentration. However, the nucleation density and crystallinity were decreased with decreasing the process pressure.

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참고문헌

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