Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Study of Silica Surface Reaction with Fluorocarbon Plasma Using Inductively Coupled Plasma

Inductively Coupled Plasma에 의한 fluorocarbon 가스 플라즈마의 실리카 표면 반응 연구

  • 박상호 (한국전자통신연구원 통신부품연구실) ;
  • 신장욱 (한국전자통신연구원 통신부품연구실) ;
  • 정명영 (한국전자통신연구원 통신부품연구실) ;
  • 최태구 (한국전자통신연구원 통신부품연구실) ;
  • 권광호 (한서대학교 전자공학과)
  • Published : 1998.06.01
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Abstract

The surface reactions of silica film($SiO_2-P_2O_5-B_2O_3-GeO_2$) with fluorocarbon plasma has been studied by using angle -resolved x-ray photoelectron spectroscopy(XPS). It has been confirmed that residual carbon consists of C-C and C-CFx bonds and fluorine mainly binds silicon in the case of etched silica by using $CF_4$ gas plasma. The surface reaction of silica with various fluorocarbon gases, such as $CF_4,C_2F_6 and CHF_3$ were investigated. XPS results showed that though the etching gases were changed, the elements and binding states of the residual layers on the etched silica by using various fluorocarbon gas plasma were nearly the same . This seems to be due to the high volatility of byproducts, that is, $SiF_4 and CO_2$ etc..

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References

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