Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Electron Mobility in $Ga{1-X}In_xAs$Alloys

$Ga{1-X}In_xAs$ 합금 반도체에서의 전자 이동도

  • 임행삼 (홍익대학교 부설과학기술연구소) ;
  • 심재훈 (홍익대학교 부설과학기술연구소) ;
  • 김능연 (대유공업전문대학 전자과) ;
  • 정재용 (대유공업전문대학 전자과)
  • Published : 1998.06.01
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Abstract

In this paper the electron mobility in $Ga{1-X}In_xAs$alloy semiconductors is simulated by using the ensemble Monte Carlo method. The simulations for Ga\ulcornerIn\ulcornerAs with In mole fraction, doping concentration and temperature as parameters are performed. The electron mobility for alloys which perfectly orderd alloys without the alloy scattering mechanism are assumed, the results show that mobility in Ga\ulcornerIn\ulcornerAs is improved by 11%, 12% and 7% for 0.25, 0.53 and 0.75. In mole fractions, respectively, We reported the theoretical results of electron mobility in $Ga{1-X}In_xAs$alloys, so those will contribute to the research and development into materials for high-speed semiconductor devices.

Keywords

References

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