Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical and Optical Characteristics of X/65/35 (X=6~11) PLZT Thin Films Prepared by Sol-Gel Method

Sol-Gel법으로 제작한 X/65/35 (X=6~11) PLZT 박막의 전기 및 광학 특성

  • Published : 1998.03.01
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Abstract

In this study, PLZT stock solutions around x/65/35 (x=6~11) ferroelectric region were prepared by Sol-Gel method and deposited on ITO-glass by spin-coating method. The thin films were annealed by RTA(rapid thermal annealing). The variations of crystallographic structure of the thin films were observed using XRD and hysteresis curves, dielectric characteristics, and optical transmittances were measured in order to investigate the characteristics of the thin films. The thin films were crystallized at $750^{\circ}C$ for 5 min by RTA. Relative dielectric constant and optical transmittance increased with increasing La content, Ec and Pr were higher for thin films than for bulk materials.

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References

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