Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
권호 표지

Effects of Conditions of Silicon Substrates on The Formation and Electrical Properties of TiSi$_2$ Thin Films

기판 조건에 따른 TiSi$_2$박막의 형성 및 전기적 특성 변화 고찰

  • 김은하 (연세대학교 세라믹공학과) ;
  • 고대홍 (연세대학교 세라믹공학과)
  • Published : 1998.11.01
Download PDF
⟨ Previous Next ⟩

Abstract

Keywords

References

  1. IEDM Tech. Dig. 21 psec Switching 0.1㎛-CMOS at Room Tempertaure Using High Performance Co-salicide Process T. Yamazaki;K. Goto;T. Fukano;Y. Nara;T. Sugi;T. Ito
  2. 1995 Symposium on VLSI Technology High Performance Sub-Tenth Micron CMOS Using Advandced Boron Doping and WSi2 Dual Gate Process T. Takeuch;T. Yamamoto;A. Furukawa;T. Tamura;K. Yoshida
  3. J. Electrochem. Soc. v.131 Interaction between Ti and SiO₂ C. Y.Ting;M. Wittmer;S. S.Iyer;S. B. Brodsky
  4. IEICE Trans. Electron. v.E77 no.3 Ti Salicide Process for Subquarter-Micron CMOS Devices K. Goto;T. Yamazaki;Y. Nara;T. Fukano;T. Sugii;Y. Arimoto;T. Ito
  5. VMIC 1993 Thermal Instability of Thin$TiSi_2$-Effect on Materials Properties and MOS Device Characteristics G. E. Georgiou;F. A. Baiocchi;S. A. Eshraghi;N. T. Ha;R Key;S. nakahara;M. R. Baker
  6. J. Appl. Phys. v.57 Metastable Phase Formation in Titanium-Silicon Thin Films R. Beyers;R. Sinclair
  7. J. Mater. Res. v.10 A Comparison of C54-TiSi₂Formation in Blanket and Submicron Gate Structure Using In-situ X-ray Diffraction During Rapid Thermal Annealing L. A Clevenger;R. A. Roy;C. Cabral Jr.;K. L. Saenger;S. Brauer;G Morales;K. F. Ludwig, Jr.;G. Gifford;J. Buccignano;J. Jordan-Sweet;P. Deharen;G. V. Stephenson
  8. Constitution of Binary Alloys(first suppl.) R. P. Elliot
  9. Constitution of Binary Alloys(second suppl.) F. A. Shunk
  10. J. Appl. Phys. v.72 Effect of Sb on Phase Transformation of Amorphous TiSi₂Thin Film X.-H.Li;J. R. Carlsson;S. F. Gong;H. T. G. Hentzell
  11. J. Vac. Sci. Technol. v.A2 Effect of Ion Implanatation Doping on thd Formation of TiSi₂ H.K.Park;J. Sachitano;M. Mepherson;T. Yamaguchi;G. Lehman
  12. 1996 Symposium on VLSI Technology. Digest of Technical Paper A Ti Salicide Process For 0.10㎛ Gate Length CMOS Technology J. A. Kittl;Q. -Z. Hong;M. Rodder;D. A. Prinslow;G. R. Misium
  13. J. Appl. Phys. v.67 A Comparison of the Reaction of Titanium with Amorphous and Monocrystalline Silicon Ivo J. M. M.Raaijmakers;Ki-Bum Kim
  14. Phys. Review B. v.49 Kinetic Mechanisms of the C49-to-C54 Polymorphic Transformation in Titanium Disilicide Thin Film : A Microstructure-Scaled Nucleation-Mode Transition Z. Ma;L. H. Allen