Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Effect of Rapid Thermal Annealing and Orientation of Si Substrate on Structural and Electrical Properties of MOCVD-grown TiO2 Thin Films

급속 후 열처리 및 실리콘기판 배향에 따른 MOCVD-TiO2박막의 구조적.전기적 특성

  • 왕채현 (연세대학교 세라믹공학과) ;
  • 최두진 (연세대학교 세라믹공학과)
  • Published : 1998.01.01
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Abstract

The structural and electrical properties of titanium dioxide(TiO2) thin films deposited on p-type (100) si and 4$^{\circ}$off(100) Si substartes by metalorganic chemical vapor deposition (MOCVD) have been studied with post rapid thermal annealing. TiO2 thin films of anatase phase were grown at 300-500$^{\circ}C$ using titanium post rapid thermal annealing at a temperature of 800$^{\circ}C$ for 30sec. rutile phase was observed in the condition of the deposition temperature over 350$^{\circ}C$ in the ambient air atmosphere and at 500$^{\circ}C$ in cacuu,. SEM and AFM study show-ed surface roughness were increased slightly from 40${\AA}$to 55${\AA}$ after annealing due to grain growth and phase transformation. From capacitane-voltage measurement of Al/TiO2./p-Si structure after annealing we obtained ideal capacitance-voltage characteristics of MOS structure with dielectric constant of 16-22 in case of (100) Si and about 30- in case of 4$^{\circ}$off(100) Si but showed the higher leakage current.

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