Journal of the Optical Society of Korea

  • 제2권1호
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  • Pages.13-21
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  • 1998
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  • 1226-4776(pISSN)
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  • 2093-6885(eISSN)
한국광학회 (Optical Society of Korea)
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Differences in Design Considerations between InGaN and Conventional High-Brightness Light-Emitting Diodes

  • Lee, Song-Jae (Electronics Engineering Department, Chungnam National University)
  • 투고 : 1997.10.08
  • 발행 : 1998.03.01
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초록

Based on the escape cone concepts, high-brightness light-emitting diodes (LEDs) have been analyzed. In AlGaAs or InGaAlP LEDs, photon absorption in the ohmic region under the electrode is known to be significant. Thus, ins general, a thick window layer (WL) and a transparent substrate (TS) would minimize photon shielding by the electrodes and considerably improve photon output coupling efficiency. However, the schemes do not seem to be necessary in InGaN system. Photon absorption in ohmic contact to a wide bandgap semiconductor such as GaN may be negligible and, as a result, the significant photon shielding by the electrodes will not degrade the photon output coupling efficiency so much. The photon output coupling efficiency estimated in InGaN LEDs is about 2.5 - 2.8 times that of the conventional high-brightness LED structures based on both WL and TS schemes. As a result, the extenal quantum efficiency in InGaN LEDs is as high as 9% despite the presumably very low internal quantum efficiency.

키워드

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피인용 문헌

  1. Self-Consistent Analysis of the Relative Intensity Noise Characteristics in the Strained AlGaInN Laser Diodes with the High Frequency Current Modulation Effects vol.12, pp.1, 2008, https://doi.org/10.3807/JOSK.2008.12.1.042
  2. Epitaxial Structure Optimization for High Brightness InGaN Light Emitting Diodes by Using a Self-consistent Finite Element Method vol.16, pp.3, 2012, https://doi.org/10.3807/JOSK.2012.16.3.292
  3. External Feedback Effects on the Relative Intensity Noise Characteristics of InAIGaN Blue Laser Diodes vol.10, pp.2, 2006, https://doi.org/10.3807/JOSK.2006.10.2.086