전자공학회논문지D (Journal of the Korean Institute of Telematics and Electronics D)
- 제35D권5호
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- Pages.54-62
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- 1998
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- 1226-5845(pISSN)
몬테카를로 계산 방식에 의한 RF 플라즈마 에칭 시스템에서의 이온 분포 계산
Calculation of ion distribution in an RF plasma etching system using monte carlo methods
초록
In a plasma etching system, ions become an important parameter in determining the wafer topography which depends on both the physical sputtering mechanism and the chemically enhanced reaction. this paper reports the energy and angular distributions of ions across the plasma sheath using a monte carlo method. The ion distribution is mainly affected by the magnitude of the sheath voltage and by the collision in the sheath. Furthemore, the local potential distribution in a plamsa sheath has been determined by solving the poisson's equation. In th is work, ionic collisions were cosidered in terms of both charge exchange and momentum transfer. The three-dimensional distributions of ions were calculated with varying the input process conditions in the plasma reactor.
키워드