Electrical and optical characeristics of ZnS:Mn thin-film electroluminescent(TFEL) devices grown by atomic layer epitaxy

Atomic layer epitaxy(ALE) 방법으로 제작된 ZnS:Mn 박막전계발광소자의 전기, 광학적 특성

The ZnS:Mn thin film electroluminescent(TFEL) devices fabricated by ALE system were investigated. Yellow-orange light emission was observed when the applied voltage exceeded 134 V and luminance increased sharply as the applied voltage increased. Luminance of 568 Cd/c $m^{2}$ was obtained under 1 KHz sinusoidal voltage wave application at the peak applied voltage of 230 V. The peak wavelength of the emissionwas 577 nm. The C-V, Q-V, $Q_{t}$ - $F_{p}$ , L- $Q_{cond}$, and V- $Q_{pol}$ have been measured under theapplication of the trapezoidal wave with its pulse width varying 0 to 75 .mu.sec. The phoshor and the insulator capacitance of the TFEL device under test were 24.3 nF/c $m^{2}$ and 9 nF/c $m^{2}$, respectively. It was observed that the threshold voltage changed from 137V to 100V as the pulse width varied from 0 to 75 .mu.sec. The L- $Q_{cond}$ characteristics showed that the light emission increased in proportion to the $Q_{cond}$. The luminance increased from 386 Cd/ $m^{2}$ to 607 Cd/ $m^{2}$ when the $Q^{+}$$_{cond}$ increased from 1.3 .mu.C/c $m^{2}$ to 2.3 .mu.C/c $m^{2}$. The V- $Q_{pol}$ characteristics showed that the V was inversely proportional to $Q_{pol}$./. th/ was inversely proportional to $Q_{pol}$./. pol/./.