Realization of Vertically Stacked InGaAs/GaAs Quantum Wires on V-Grooves with (322) Facet Sidewalls by CHEMICAL Beam Epitaxy

  • 발행 : 1998.06.30

초록

We report, for the first time, the fabrication of vertically stacked InGaAs/GaAs quantum wires (QWRs) on V-grooved substrates by chemical beam epitaxy (CBE). To fabricate the vertically stacked QWRs structure, we have grown the GaAs resharpening barrier layers on V-grooves with (100)-(322) facet configuration instead of (100)-(111) base at 450 $^{\circ}C$. Under the conditions of low growth temperature, the growth rate of GaAs on the (322) sidewall is higher than that at the (100) bottom. Transmission electron microscopy verifies that the vertically stacked InGaAs QWRs were formed in sizes of about $200{\AA} {\times} 500{\sim}600 {\AA}$. Three distinct photoluminescence peaks related with side-quantum wells (QWLs), top-QWLs and QWRs were observed even at 200 K due to sufficient carrier and optical confinement. These results strongly suggest the existence of the quantized state in the vertically stacked InGaAs/GaAs QWRs grown by CBE.

키워드

참고문헌

  1. Appl. Phys. Lett. v.40 no.11 Multidimensional Quantum Well Laser and Temperature Dependence of Its Threshold Current Arakawa, Y.;Sakaki, H.
  2. Surf. Sci. v.267 no.1-3 Quantum Wires, Quantum Boxes and Related Structures: Physics, Device Potentials and Structural Requirements Sakaki, H.
  3. Ext. Abstr. of the 1995 Int'l Conf. on Solid State Devices and Materials Simulation of Enhanced Drain Current Characteristics in a MOSFET with a Quantum Wire Structure Incorporating a Periodically Bent $Si-SiO_2$ Interface Tanaka, J.;Sawada, A.
  4. Appl. Phys. Lett. v.49 no.16 Optical Spectroscopy of Ultrasmall Structures Etched from Quantum Wells Kash, K.;Scherer, A.;Worlock, J.M.;Craighead, H.G.;Tamargo, M.C.
  5. Appl. Phys. Lett. v.54 no.15 Impact of Sidewall Recombination on the Quantum Efficiency of Dry Etched InGaAs/InP Semiconductor Wires Maile, B.E.;Forchel, A.;Germann, R.;gutzmacher, D.
  6. J. Appl. Phys. v.71 no.1 Fabrication of GaAs Quantum Wires on Epitaxially Grown V-grooves by Metal-organic Chemical-Vapor Deposition Tsukamoto, S.;Nagamune, Y.;Nishioka, M.;Arakawa, Y.
  7. J. Cryst. Growth v.127 no.1-4 Resharpening Effect of AlAs and Fabrication of Quantum Wires on V-grooved Substrates by Molecular Beam Epitaxy Shen, X.Q.;Tanaka, M.;Nishinaga, T.
  8. J. Cryst. Growth v.150 no.1-4 Fabrication of InGaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy and their Characterization Fujikura, H.;Hasegawa, H.
  9. Appl. Phys. Lett. v.64 no.3 Formation of GaAs Ridge Quantum Wire Structures by Molecular Beam Epitaxy on Patterned Substrates Koshiba, S.;Noge, H.;Akiyama, H.;Inoshita, T.;Nakamura, Y.;Shimizu, A.;Nagamune, Y.;Tsuchiya, M.;Kano, H.;Sakaki, H.;Wada, K.
  10. J. Cryst. Growth v.124 no.1-4 Fabrication of InGaAs Strained Quantum Wires Using Selective MOCVD Growth on $SiO_2$-patterned GaAs Substrate Nishioka, M.;Tsukamoto, S.;Nakamune, Y.;Tanaka, T.;Arakawa, Y.
  11. Appl. Phys. Lett. v.64 no.4 Maskless InP Wire Formation on Planar GaAs Substrates Ahopelto, J.;Lezec, H.;Ochiai, Y.;Usui, A.;Sakaki, H.
  12. Abstr. of the 1995 Fall Meeting of Mat. Res. Soc. Reduction of Lateral Dimension on InGaAs/GaAs Multilayers on Non-(111) V-grooved GaAs(100) Substrate by Chemical Beam Epitaxy Kim, S.B.;Ro, J.R.;Park, S.J.;Lee, E.H.
  13. ETRI J. v.16 no.3 Growth of GaAs by Chemical Beam Epitaxy Using Unprecracked Arsine and Trimethylgallium Park, S.J.;Ro, J.R.;Sim, J.K.;Lee, E.H.
  14. Surf. Sci. v.267 no.1-3 Two-Dimensional Quantum Confinement in Multiple Quantum Wire Lasers Grown by OMCVD on V-grooved Substrates Kapon, E.;Hwang, D.M.;Walther, M.;Bhat, R.;Stoffel, N.G.
  15. Jpn. J. Appl. Phys. v.32 no.12B Fabrication of GaAs Quantum Wire Structures by Hydrogen-Assisted Molecular Beam Epitaxy Sugaya, T.;Kaneko, M.;Okada, Y.;Kawabe, M.
  16. Appl. Phys. Lett. v.63 no.11 Crystallographic Selective Growth of GaAs by Atomic Layer Epitaxy Isshiki, H.;Aoyagi, Y.;Sugano, T.
  17. Appl. Phys. Lett. v.63 no.22 The Properties of the Quantum Wires Grown on V-grooved $Al_{0.3}Ga_{0.7}As/GaAs$ Substrate by Atmospheric Pressure Metalorganic Chemical Vapor Deposition Lee, M.S.;Kim, Y.;Kim, M.S.;Kim, S.I.;Min, S.K.;Kim, Y.D.;Nahm, S.
  18. Appl. Phys. Lett. v.62 no.18 InGaAs/GaAs Strained Quantum Wire Lasers Grown by Organometallic Chemical Vapor Deposition on Nonplanar Substrates Walther, M.;Kapon, E.;Caneau, C.;Hwang, D.M.;Schiavone, L.M.
  19. J. Cryst. Growth v.124 no.1-4 Fabrication of InGaAs Strained Quantum Wires Using Selective MOCVD Growth on $SiO_2$-patterned GaAs Substrate Nishioka, M.;Tsukamoto, S.;Nagamune, Y.;Tanaka, T.;Arakawa, Y.