ETRI Journal

Electronics and Telecommunications Research Institute (한국전자통신연구원)
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Characteristics of Ferroelectric Transistors with $BaMgF_4$ Dielectric

  • Lyu, Jong-Son (Semiconductor Technology Division, ETRI) ;
  • Jeong, Jin-Woo (Kyungbook National University) ;
  • Kim, Kwang-Ho (Department of Semiconductor Engineering, Cheongju University) ;
  • Kim, Bo-Woo (Advanced Technology Research Department for ULSI Devices and Micro/Nano Systems at ETRI) ;
  • Yoo, Hyung-Joun (Information and Communications University)
  • Published : 1998.06.30
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Abstract

The structure and electrical characteristics of metal-ferroelectric-semiconductor FET(MFSFET) for a single transistor memory are presented. The MFSFET was comprised of polysilicon islands as source/drain electrodes and $BaMgF_4$ film as a gate dielectric. The polysilicon source and drain were built-up prior to the formation of the ferroelectric film to suppress a degradation of the film due to high thermal cycles. From the MFS capacitor, the remnant polarization and coercive field were measured to be about $0.6{\mu}C/cm^2$ and 100 kV/cm, respectively. The fabricated MFSFETs also showed good hysteretic I-V curves, while the current levels disperse probably due to film cracking or bad adhesion between the film and the Al electrode.

Keywords

References

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