Electrical & Electronic Materials (E2M - 전기 전자와 첨단 소재)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The DC Characteristics of Submicron MESFEFs

서브미크론 MESFET의 DC 특성

  • 임행상 (홍익대학교 전자공학과) ;
  • 손일두 (홍익대학교 전자전산공학과) ;
  • 홍순석 (홍익대학교 전자전산공학과)
  • Published : 1997.12.01
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Abstract

In this paper the current-voltage characteristics of a submicron GaAs MESFET is simulated by using the self-consistent ensemble Monte Carlo method. The numerical algorithm employed in solving the two-dimensional Poisson equation is the successive over-relaxation(SOR) method. The total number of employed superparticles is about 1000 and the field adjusting time is 10fs. To obtain the steady-state results the simulation is performed for 10ps at each bias condition. The simulation results show the average electron velocity is modified by the gate voltage.

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