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The Institute of Electronics and Information Engineers (대한전자공학회)
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플래시 메모리의 응용과 향후 전망

  • 서강덕 (삼성전자 반도체 메모리본부)
  • Published : 1997.06.01
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Abstract

Keywords

References

  1. ISSCC Digest of Technical Papers A 3.3V 16Mb Flash Memory with Advanced Write Automation Baker,A.(et al.)
  2. IEDM Digest of Technical Papers A 2.3 μmm2 cell structure for 16Mb NAND EEPROMS R.Shirota(et al.)
  3. 플래시 메모리 성장 시나리오 조사보고서 DataQuest Japan
  4. ISSCC Digest of Technical Papers A 34Mb 3.3V serial flash EEPROM for solid state disk applications R.Cernea(et al.)
  5. IEEE J. Solid-State Circuits v.31 no.11 117 mm2 3.3V Only 128Mb Multilevel NAND Flash Memory for Mass Storage Applications T.S.Jung(et al.)
  6. Market Statistics Worldwide MOS Memory Forecast Update DataQuest
  7. 일경 Microdevices