Journal of the Korean Vacuum Society (한국진공학회지)
- Volume 6 Issue S1
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- Pages.43-46
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- 1997
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- 1225-8822(pISSN)
Dislocation Density Estimation and mosaic Model for GaN/SiC(0001) by High Resolution x-ray Diffraction
- Yang, Quankui (State Key Laboratory of Functional Materials for Informatics, Shanghai Insitute of Metallurgy Chinese Academy of Sciences) ;
- Li, Aizhen (State Key Laboratory of Functional Materials for Informatics, Shanghai Insitute of Metallurgy Chinese Academy of Sciences)
- Published : 1997.10.01
Abstract
High resolution x-ray diffraction and two dimensional triple axis mapping were used to characterize a group of GaN layers of about 1.1
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