Single source CVD of epitaxial 3C-SiC on Si(111) without carbonization

Epitaxial growth of SiC films on Si(111) substrates without carbonization was carried out n the temperature range of 900-100$0^{\circ}C$ under high vacuum conditions by single source chemical vapor deposition (CVD) of 1,3-disilabutane (H$_3$SiCH$_2$SiH$_2$$CH_3$). The monocrystalline nature of the films was confirmed by XRD, RHEED and cross-sectional TED. Cross-sectional TEM image indicated that no void exists and the boundary is clear and smooth at the SiC-Si(111) interface. RBS and AES analyses also showed that the films are stoichiometric and homogeneous in depth, From the results, this single source growth techniqe of using 1,3-disilabutane has been found suitable and effective for epitaxial growth of stoichiometric SiC on Si(111) without carbonization at temperatures below 100$0^{\circ}C$.