Journal of Electrical Engineering and information Science

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

The Optimum Condition of Anisotropic Bulk(10) Si Etching with KOH for High Selectivity and Low Surface Roughness

  • Lim, Hyung-Teak (School of Electrical Engineering, Seoul National University) ;
  • Kim, Yong-Kweon (School of Electrical Engineering, Seoul National University) ;
  • Lee, Seung-Ki (Department of Electrical Engineering, Dankook University)
  • 발행 : 1997.10.01
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초록

In this paper, the optimum condition of (110) Si etching with the potassium hydroxide(KOH) etchant is presented. Although several researches on (110) Si anisotropic etching have been studied, there has been lack of effects of mask quality and etching conditions on the selectivity and the roughness o the etched surface. Three kinds of masks (film, emulsion and E-beam mask) were used in order to verify the effect of etching properties. Anisotropic bulk etching depends on the crystalline orientation and the concentration and temperature of the etchant. In order to investigate the effect of etching conditions on selectivity and the roughness of the etched surface, the concentration of the etchant was varied from 35 to 45 per cent in weight with increments by 5 per cent and the temperature was changed from 70 to 90$^{\circ}C$ with increments by 10$^{\circ}C$. The combination of the temperature of 70$^{\circ}C$ and the concentration of 40wt.% was found to be the optimum etching condition for high selectivity. Etched surfaces show minimum surfaces show minimum surface roughness at a temperature of 80$^{\circ}C$ and a concentation of 40wt.%. Comb structures with various comb widths were fabricated and the lengths of the combs wree measured with several etching time durations. A micro comb structure 525$\mu\textrm{m}$ high was fabricated for MEMS application.

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참고문헌

  1. IEEE Trans. Electron Devices v.ED-25 no.10 Anisotropic etching of silicon Kenneth E.Bean.
  2. Micromech. Microeng. v.2 A Latching Accelerometer Fabricated by the Anisotropic Etching of (110) Oriented Silicon Wafers Dino R. Ciarlo.
  3. Sensors and Actuators. v.A45 A Surface micromachined Silicon Accelerometer with On-chip Circuitry Wolfgang Kuehnel.;Steven Sherman.
  4. IEEE Trans. Electron Devices v.ED-33 no.4 Resonant Microbridge VaporSenor Roger T.Howe.;Richard S.Miller.
  5. Proc. 8th Int. Conf. Soild-state Sensors actuators Eurosensors Ⅸ(Transduster'95) v.1 Design and Fabrication of Micro Mirror Supported by Electroplated Nickel Posts S.W.Chung.;J.W.Shin.;y.K.Kim.;B.S.Han.
  6. IEEE MEMS Proc. Effective Methods to Prevent Stiction During Post-Release-Etch Processing Takeshi Abe.;William C.Messner.;Michael L.Reed.
  7. Sensors and Actuators. v.A45 Anisotropic Etch-stop Properties of Nitrogen-implanted silicon M.C.Acero.;J.Esteve.;J.Montserrat.;J.Bausells.;A.Prez-Rodrguez.;A.Romano-Rodrguez and J.R.Morante
  8. Sensors and Actuators. v.A20 Laterally Driven Polysilicon Reonant Microstructures William C.Tang.;Tu-Cuong.;H.Nguyen.;Roger T.Howe.
  9. IEEE MEMS Proc. Vertical Comb Array Microactuators A.Selvakumar.;K.Najafi.;W.H.Juan.;S.Pang.
  10. J. of MEMS. v.1 no.4 Electrostatic-comb Drive Levitation and Control Method William,C.Tang.;Martin,G.Lim.;Roger,T.Howe.
  11. IEEE Trans. Electron Devices v.ED-25 no.10 Fabrication of Novel Three-dimensional Microstructures by the Anisotropic Etching of (100) and (110) Silicon Ernest Bassous.
  12. J. Micromech. Microeng. v.5 Etch Rate and Surface Roughness of Deep Narrow U-grooves in (110)-Oriented Silicon P.Krause.;E.Obermeier.
  13. IEEE MEMS Proc. Micro-Opto-Mechanical Devices Fabricated by Anisotropic Etching of (110) Silicon Yuji Uenishi.;Masahiro Tsugai.;Mehran Mehregany.
  14. IEE Proc. v.130 no.2 Anisotropic Etching of Silicon:a Model Diffusion Controlled Reaction D.M.Allen.;I.A.Routledge.
  15. IEEE MEMS Proc. Groove depth Uniformization in (110) Si Anisotropic Etching By Ultrasonic Wave and Application to Accelerometer Fabrication K.Ohwada.;Y.Negoro.;Y.Konaka.;T.Oguchi.
  16. IEEE, Trans. Electron Devices v.ED-27 no.5 UMOS Transistors on (110) Silicon Elie S.Ammar.;T.J.Rogers.
  17. IEEE MEMS Proc. Comer Compensation Techniques in Anisotropic Etching of (100)-Silicon Using Aqueius KOH H.Sandrnaier.;H.L.Offereins.;W.Lang.
  18. Electrochem. Soc. v.131 no.9 Corner Undercutting in Anisotropically Etched Isolation Contours M.M.Abu-Zeid.