Journal of Electrical Engineering and information Science

대한전기학회 (The Korean Institute of Electrical Engineers)
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pH Sensing Properties of ISFETs with LPCVD Silicon Nitride Sensitive-Gate

  • 발행 : 1997.06.01
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초록

Ion-Sensitive Field-Effect Transistors(ISFETs) with LPCVD silicon nitride as a sensitive gate were fabricated on the basis of a CMOS process. The silicon nitride was deposited directly on a poly silicon gate-electrode. Using a specially designed measuring cell, the hydrogen ions sensing properties of the ISFET in liquid could be investigated without any bonding or encapsulation. At first, th sensitivity was estimated by simualtions according to the site-binding theory and the experimental results were analysed and compared with simulated results. The measured dta were in good agreement with the simulated results. The silicon nitride based ISFET has good linearity evaluated from correlation factor ($\geq$0.9998) and a mean pH-sensitivity of 56.8mV/pH. The maximum hysteresis width between forward(pH=3\longrightarrowpH=11)- and backward(pH=11\longrightarrowpH=3) titration was 16.7mV at pH=6.54.

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참고문헌

  1. Analytical and biomedical application of Ion-Sensitive Field-Effect Transistors v.ⅩⅩⅡ P.Bergveld;A.Sibbald
  2. Sensors & Actuators v.1 Methods of ISFET fabrication T.Matsuo;M.Esashi
  3. Sensors & Actuators v.6 Stability of siliconnitride/silcondioxide/silicon electrodes used in pH microelectronic sensors F.Chauvet;A.Amari;A.Martinez
  4. IEEE Electron Device Letters v.9 no.1 A Process for the combined fabrication of ion sensors and CMOS circuits L.Bousse;J.Shott;J.D.Meindle
  5. Sensors & Actuators B v.18-19 Photho-CVD silicon nitride thin layers as pH-sensitive membrane V.Rocher(et al.)
  6. IEEE Trans. Electron. Devices v.30 no.10 Operation of chemically sensitive Field-Effect Transistors as a function of the insulator-electrolyte interface L.Bousse;N.F.de Rooij;P.Bergveld
  7. Japan J. Applyed. Phyics. v.26 no.12 The stability of $Ta_2O_5$ as a solid-state ion-sensitive membrane M.Teravanithorn;Y.Miyahara;.Moritzmi
  8. Sensors & Actuators B v.7 The super-Nernstian pH sensitivity of $Ta_2O_5$ Gate ISFETs A.S.Poghossian
  9. IEEE Trans. Electron. Devices v.33 no.1 A generalized theory of an electrolyte-insulator-semiconductor Field-Effect Transistor C.D.Fung;P.W.Cheung;W.H.Ko
  10. IEDM Techn. Digest A self-contained CMOS Integrated pH Sensor H.S.Wong;M.H.White
  11. Ph.D. Thesis, Faculty of Electrical Engineering & Informatical Engineering, TU Munchen Entwicklung einsatzfahiger Flussigkeitssen-soren auf Feldeffekttransistorbasis mit Hilfe eines speziellen CMOS-Technologie-Prozesses P.Berg
  12. IEEE Trans. Electron. Devices v.26 Basic properties of the electrolyte-$Sio_2$-Si system: physical and theoritical aspects W.M.Siu;R.S.C.Cobbold
  13. J. Chem. Soc., Faraday Trans. I v.70 Site-binding model of the electrical double layer at the oxide/water interface D.E.Yates;S.Levine;T.W.Healy
  14. IEEE Trans. on Electron Devices v.34 no.8 Ion sensing devices with silicon nitride and borosilicate glass Insulators D.L.Harame;L.J.Bousse;J.D.Shott;J.D.Meindl
  15. Sensors & Actuators B v.1 Investigation of pH-sensitive ISFETs with oxide and nitride membranes using colloid chemistry methods Y.Vlasov;A.Bratov;M.Sidorova;Y.Taranov
  16. Ph. D. Thesis, Stanford Univ. Integrated circuit chemical sensors D.Harame