Pr-첨가 ZnO 바리스터의 전기적 특성

Electrical Properties of Pr-doped ZnO Varistors

  • 곽민환 (경상대학교 공과대학 전자재료공학과, 첨단소재연구소) ;
  • 이상기 (경상대학교 공과대학 전자재료공학과, 첨단소재연구소) ;
  • 조성걸 (경상대학교 공과대학 전자재료공학과, 첨단소재연구소)
  • 발행 : 1997.12.01

초록

ZnO varistors containing 5.0 at% Co3O4 and Pr6O11, ranging from 0.1 to 1.0 at%, were sintered at 130$0^{\circ}C$ and 135$0^{\circ}C$. The I-V characteristics and nonlinear coefficients of the specimens were investigated with respect to Pr addition and sintering temperature. In general the specimens sintered at 130$0^{\circ}C$ showed better varistor characteristic than those fired at 135$0^{\circ}C$, which seemed to be related with the liquid phase formation during sintering. The barrier heights obtained from C-V relations, 0.29-1.36 eV, were different from those acquired using resistivity-temperature plots measured at low voltage per grain boundary. Therefore the estimation of potential barrier heights using C-V relations is better suited for the specimens prepared in this study. The carrier densities obtained using C-V relations were ~1018 cm-3.

키워드

참고문헌

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