Journal of the Korean Institute of Telematics and Electronics D (전자공학회논문지D)
- Volume 34D Issue 12
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- Pages.46-53
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- 1997
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- 1226-5845(pISSN)
The analysis on TMA gas-sensing characteristics of ZnO thin film sensors
ZnO 막막 센서의 TMA 가스 검지 특성 분석
Abstract
The TMA gas sensors are fabricated with the ZnO-based thin films grown by a RF magnetron sputtering method. The hall effect measurement and AES analysis are carried out to investigate the effects of the sputtering gases and dopants which effect on the electrical resistivity and sensitivity to TMA gas. We measure the cfhanges of the surface carrier concentration, haall electron mobility, electrical resistivity, surface condition, and depth profile of the films. The ZnO-based thin film sensors sputtered in oxygen, or added with dopants showed a high sruface carrier concentration, film sensors sputtered in oxygen and doped with 4.0 wt.%
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