반도체 레이저의 비선형 이득의 물리적인 매카니즘에 관한 연구

Study on the physical mechanism of nonlinear gain in semiconductor lasers

  • 김창봉 (공주대학교 전기전자정보공학부) ;
  • 엄진섭 (강원대학교 전자공학과)
  • 발행 : 1997.09.01

초록

The dominant physical process repsonsible for the nonlinear gain is from spectral-hole burning with the time constant fo about 50fs and the contribution to the nonlinea rgain form hot carriers effect is determined to be about 15% of the contribution due to spectral-hole burning. To prove the above results we fit the data of hall and found that hot carriers have a profound effect on their experimental data despite the fact that the magnitude of hot carriers effect is only 15% of spectral-hole burning. We suggest that the experimenta with a pump pulse width of 180 fs is very sensitive in detecting the effect of hot carriers, but is not sensitive in detecting much faster process associated with spectral-hole burning.

키워드