Journal of the Korean Institute of Telematics and Electronics D (전자공학회논문지D)
- Volume 34D Issue 7
- /
- Pages.45-55
- /
- 1997
- /
- 1226-5845(pISSN)
Numerical analysis of HgCdTe heterojunction photodiodes
HgCdTe 이종접합 광다이오드의 수치 해석
Abstract
Electircal characteristics of HgCdTe photodiodes with a heterostructure to achieve high performance are analyzed numerically. A two-dimensional device simulator which can handle a HgCdTe heterostructure, was developed for this work. The effects of band nonparabolicity, carrier degeneracy, and band-offset of heterointerace are included in a carrier transport model. A unified generation-recombination model includes simultaneously phonon-assisted tunneling and pure tunneling of carriers via traps is newly employed for describing the electric field and temperature dependency of dark current effectively. Furthermore, to accurately predict the effect mole fraction variations on genration rates, ray-trace algorithm is incorporated in the our simulator. Under the various circumstances such as dark, illumination, and surface states, electrical properties of planar heterostructure photodiode are presented and those of homojunction are compared. These results serve as a explanation of cap layer's role on performance.
Keywords