Journal of the Korean Institute of Telematics and Electronics D (전자공학회논문지D)
- Volume 34D Issue 5
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- Pages.61-66
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- 1997
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- 1226-5845(pISSN)
InAlAs/InGaAs schottky barrier enhanced metal semiconductor metal photodiode with very low dark current
매우 낮은 암전류를 가지는 schottky barrier enhanced InAlAs/InGaAs metal semiconductor metal 광다이오드
Abstract
In this paper we report the fabrication of an InGaAs metal-semiconductor-metal (MSM) photodiode(PD) which an InAlAs barrier enhancement layer that has very low dark current and high speed chracteristics. The detector using Cr/Au schottky metal fingers with 4um spacing on a large active area of 300*300um
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