전자공학회논문지D (Journal of the Korean Institute of Telematics and Electronics D)
- 제34D권3호
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- Pages.74-86
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- 1997
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- 1226-5845(pISSN)
3차원 산화 공정을 위한 유한요소법 수치 해석기 개발에 관한 연구
Development of finite element numerical simulation for three-dimensional oxidation
초록
With continued miniaturization and development of new devices, the highly nonuniform oxidation of three-dimensional non-planar silicon structures plays an increasingly important role. In this paper, the three-dimensional finite element numerical simulator. Grwoth of oxide is a coupled process of diffusion of oxidant and deformation of oxide. Because boundaries of oxide are moved in each time step and LOCOS structure is formed three-dimensional shape of sruface, it is necessary to develope an efficient node control algorithm that can locally generate and eliminate the node. Therefore we have developed the optimized three-dimensional mesh generator which is cpable of refining and eliminating the meshes at the moving boundary of oxide, and hve developed three-dimensional finite element oxidation solver.
키워드