Journal of Sensor Science and Technology (센서학회지)
- Volume 6 Issue 1
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- Pages.63-71
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- 1997
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- 1225-5475(pISSN)
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- 2093-7563(eISSN)
Fabrication and characteristics of TFEL device using phosphor layer ZnS:Mn/$ZnS:TbF_{3}$ slatted structure
ZnS:Mn/$ZnS:TbF_{3}$ 적층구조의 형광층을 이용한 TFEL소자의 제작 및 그 특성
- Park, Kyung-Vin (Dept. of Electronics, Kyungpook National University) ;
- Kim, H.W. (Dept. of Electronics, Kyungpook National University) ;
- Bae, S.C. (Dept. of Electronics, Kyungpook National University) ;
- Kim, Y.J. (Dept. of Electronics, Kyungpook National University) ;
- Cho, K.H. (Siltron Co., Ltd.) ;
- Kim, K.W. (Dept. of Electronics, Kyungpook National University)
- 박경빈 (경북대학교 전자공학과) ;
- 김호운 (경북대학교 전자공학과) ;
- 배승춘 (경북대학교 전자공학과) ;
- 김영진 (경북대학교 전자공학과) ;
- 조기현 (실트론(주)) ;
- 김기완 (경북대학교 전자공학과)
- Published : 1997.01.31
Abstract
The thin-film eletroluminescent (TFEL) device having the stacked structure of ZnS:Mn/
ZnS:Mn/
Keywords