CSVT법으로 제조된 CdS박막의 전기적 및 광학적 특성

Electrical and Optical Properties of CdS Thin Films Deposited by CSVT Method

CSVT(close spaced vapor transport)법으로 CdS/CdTe 이종접합 태양전지의 창재에 적합한 낮은 비저항과 적절한 광투과도를 갖는 CdS막을 증착하였다. 기판온도, 분위기압, 소스온도 등의 증착조건에 따른 CdS막의 전기적 및 광학적 특성을 조사하였다. 최적 증착조건은 기판온도 $300^{\circ}C$, 분위기압 100mTorr 및 소스온도 $730^{\circ}C$였으며, 이 때 증착된 CdS 막의 비저항은 $7.21{\times}10^{3}{\Omega}cm$있으며 광투과도는 63%이상이었다. 일반적인 고진공증착법으로 제조된 CdS막에 비해서 결정성이 크게 향상되었고 비저항은 약 3승정도 감소하였으며 광투과도는 비슷하여 창재로서 우수한 특성을 나타내었다.

CdS thin films with low resistivity and adequate transmittance in the visible region for the window of CdS/CdTe hetero junction solar cel1 were prepared by close spaced vapor transport(CSVT) method. The electrical and optical properties of the CdS thin films were investigated in terms of the deposition conditions, such as the substrate temperature, the working pressure, and the source temperature. The substrate temperature, the working pressure, and the source temperature for the optimum deposition of the CdS thin films were $300^{\circ}C$, 100mTorr, and $730^{\circ}C$, respectively. The resistivity and the transmittance of the CdS thin films deposited under this condition were about $7.21{\times}10^{3}{\Omega}cm$ and over 65%, respectively. The crystallinity, the resistivity, and optical band gap were improved greatly compared to the CdS thin films deposited by general high vacuum evaporation.