Journal of the Korean Chemical Society (대한화학회지)

Korean Chemical Society (대한화학회)
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Preparation of Zn-Doped GaN Film by HVPE Method

HVPE법에 의한 Zn-Doped GaN 박막 제조

  • Kim, Hyang Sook (Soid State Chemistry Lab,Korea Research Institute of Chemical Technology) ;
  • Hwang, Jin Soo (Soid State Chemistry Lab,Korea Research Institute of Chemical Technology) ;
  • Chong, Paul Joe (Soid State Chemistry Lab,Korea Research Institute of Chemical Technology)
  • 김향숙 (한국화학연구소 고체화학실) ;
  • 황진수 (한국화학연구소 고체화학실) ;
  • 정필조 (한국화학연구소 고체화학실)
  • Published : 19960300
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Abstract

For the preparation of single-crystalline GaN film, heteroepitaxial growth on a sapphire substrate was carried out by halide vapor phase epitaxy(HVPE) method. The resulting GaN films showed n-type conductivity. The insulator type GaN film was made by doping with Zn(acceptor dopant), which showed emission peaks around 2.64 and 2.43 eV. The result of this study indicates that GaN can be obtained in an epitaxial structure of MIS(metal-insulator-semiconductor) junction. The observed data are regarded as fundamental in developing GaN epitaxial films for light emitting devices of hetero-structure type.

GaN 단결정 박막은 halide vapor phase epitaxy(HVPE)방법을 사용하여 사파이어 기판위에 헤케로에피탁시하게 성장시켰다. 이렇게 제조된 박막은 n형 전동성을 갖는다. 아연(Zn)을 받개 불순물로 도핑시켜 절연형 GaN 박막을 만들었는데 2.64과 2.43eV의 청색영역에서 발광 피크를 가졌다. 본 연구에의해 GaN 박막은 MIS(metal-insulator-semiconductor) 접합구조로 제작이 가능함을 시사하였고, 이종접합형 발광소자 개발에 기초자료가 될 것으로 전망된다.

Keywords

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