Journal of the Korean institute of surface engineering (한국표면공학회지)
- Volume 29 Issue 5
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- Pages.570-576
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- 1996
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- 1225-8024(pISSN)
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- 2288-8403(eISSN)
PROPERTIES OF PIB-CU FILMS ACCELERATION VOLTAGE AND IONIZATION POTENTIAL
- Kim, K.H. (Div. of Ceramics, Korea Institute of Science and Technology) ;
- Jang, H.G. (Div. of Ceramics, Korea Institute of Science and Technology) ;
- Han, S. (Div. of Ceramics, Korea Institute of Science and Technology) ;
- Choi, S.C. (Div. of Ceramics, Korea Institute of Science and Technology) ;
- Choi, D.J. (Dept. of Ceramic engineering, Yonsei university) ;
- Jung, H.J. (Div. of Ceramics, Korea Institute of Science and Technology) ;
- Koh, S.K.
- Published : 1996.10.01
Abstract
Cu films for future ULSI metallization were prepared by partially ionized beam (PIB) deposition and characterized in terms of preferred orientation, grain size, roughness and resistivity. PIB-Cu films were prepared on Si (100) at pressure of
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