LOW TEMPERATURE DIAMOND GROWTH USING MICROWAVE PLASMA CVD

Diamond films were grown at lower temperatures (630-813K) on Si, Al (1100P), and Al-Si(8A, 8B, BC) alloy substrates using improved microwave plasma CVD apparatus in a mixed methane and hydrogen plasma. Improved microwave plasma CVD apparatus equipped water cooled substrate holder and the substrates were set up lower position than bottom line of the applicator waveguide. When the methane concentration was high and growth was conducted at lower pressures the diamond films were synthesized. Moreover the deposits on the scratched substrates formed flat surfaces consisting of fine grains. XRD results, the deposits were identified to cubic diamond. An analysis using Raman spectroscopy, further confirmed that diamond films deposited on the Si substrates were high quality. The deposits on the Al substrates, in contrast, contained amorphous carbon. While the quality of the deposits on the Al-Si substrates were differed with the substrate alloys.