Journal of the Korean institute of surface engineering (한국표면공학회지)
- Volume 29 Issue 5
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- Pages.467-473
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- 1996
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- 1225-8024(pISSN)
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- 2288-8403(eISSN)
USE OF SINGLE PRECURORS FOR THE PREP ARATION OF SILICON CARBIDE FILMS
- Lee, Kyunf-Won (Korea Research Institute of Chemical. Technology) ;
- Yu, Kyu-Sang (Korea Research Institute of Chemical. Technology) ;
- Kim, Yun-Soo (Korea Research Institute of Chemical. Technology)
- Published : 1996.10.01
Abstract
Heteroepitaxial growth of cubic silicon carbide films on Si(001) and Si(111) substrates at temperatures 900-
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