한국표면공학회지 (Journal of the Korean institute of surface engineering)
- 제29권5호
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- Pages.399-406
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- 1996
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- 1225-8024(pISSN)
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- 2288-8403(eISSN)
PREFERRED ORIENTATION OF TIN FILM STUDIED BT A REAL TIME SYNCHROTRON X-RAY SCATTERING
초록
The orientational cross-over phenomena in an RF sputtering growth of TiN films were studied in an in-situ, real-time synchrotron x-ray scattering experiment. For the films grown with pure Ar sputtering gas, the cross-over from the more strained (002)-oriented grains to the less strained (111)-oriented grains occurred as the film thickness was increased. As the sputtering power was increased, the cross-over thickness, at which the growth orientation changes from the <002> to the <111> direction, was decreased. The addition of
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