References
- Proc. Mat. Res. Soc. Symp. VLSI VI L.S.White;R.O.C.Blumenthal;H.McAdams
- MRS Bulletin v.18 no.6 A.E.Kaloyeros;M.A.Fury
- J. Electrochem. Soc. v.134 no.5 T.Hara;H.Takahashi;Y.Ishizawa
- Solid State Technol. v.47 T.Ohmi;K.Tsubouchi
- J. Electrochem. Soc. v.140 no.8 C.Y.Mak;S.Nakahara;Y.Okinaka;H.S.Trop;J.A.Taylor
- J.Electronic Materials v.22 no.6 H.D.Merchant
- J.Electronic Materials v.24 no.10 Y.T.Kim;C.H.Jun;J.T.Baek;H.J.Yoo;S.K.Chung
- J. Electrochem. Soc. v.139 no.11 H.Miyazaki;H.Kojima;A.Hiraiwa;Y.Hamma;K.Murakami
- J. Electrochem. Soc. v.141 no.3 H.Miyazaki;H.Kojima;A.Hiraiwa;Y.Hamma;K.Murakami
- J. Appl. Phys. v.67 no.6 B.C.Johnson
- Jpn. J. Appl. Phys. v.35 no.3 H.Miyazaki;K.Hinode;Y.Homma;N.Kobayashi
- Proc. Mat. Res. Soc. Symp. VLSI VI S.P.Murarka
- Ext. Abs. 53rd Autumn Meeting, Jpn. Soc. Appl. Phys.18p-ZR-3 T.Fukada;M.Hasegawa;Y.Toyoda;K.Sato;M.Nunoshita;H.Kotani
- Proc. VMIC Conference J.Li;Y.Shacham Diamond;J.W.Mayer;E.G.Colgan
- Appl.Phys.Lett. v.60 no.22 S.Imai;Y.Yabuuchi;Y.Terai;T.Yasui;C.Kudo;I.Nakao;M.Fukumoto
- J. Electrochem. Soc. v.133 no.6 J.D.McBrayer;R.M.Swanson;T.W.Sigmon
- IEEE IEDM Tech. Digest v.39 Y.Arita;N.Awaya;K.Ohno;M.Sato
- Proc. VMIC Conference H.W.Piekaar;L.F.Tz.Kwakman;E.H.A.Granneman
- J. Electrochem. Soc. v.139 no.4 J.Li;Y.Schacham Diamand
- J. Appl. Phys. v.75 no.7 P.J.Ding;W.A.Lanford
- J. Electrochem. Soc. v.140 no.8 Y.Shacham Diamand;A.Dedhia;D.Hoffstetter;W.G.Oldham
- J. Electrochem. Soc. v.139 no.3 T.Nitta;T.Ohmi;M.Otsuki;T.Takewaki;T.Shibata