참고문헌
- Integrated Ferroelectric v.6 256 kb Ferroelectric Nonvolatile Memory Technology for 1T/1C cell with 100 ns Read/Write Time at 3V T Sumi;N. Moriwaki;G Nakane;T. Nakakuma;Y. Judai;Y. Uemoto;Y. Nagano;S. Hayashi;M. Azuma;T. Otsuki;G. Kano;J D. Cuchiaro;M C. Scott;L.D. McMillan;C.A. Paz De Araujo
- Proc. 4th International Symp on Integrated Ferroelectric Feasibility for Memory Devices and Electrical Characterization of Newly developed Fatigue Free Capacitors T. Mihara;H. Watanabe;C.A. Paz de Araujo;J. Cuchiaro
- Abst of 7th International Symp on Integrated Ferroelectrics v.March Superior Electrical Characteristics of Bi-layered Perovskite Thin Films and Comparison with PZT T Mihara;H. Yoshimori;H. Watanabe;T. Itoh;C. Paz de Araujo;McMillian
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Jpn J. Appl Phys
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Characteristics of Bismuth Layered
$SrBi_2Ta_2O_9$ Thin Film Capacitors and Comparison with Pb(Zr,Ti)O₃ T. Mihara;H. Yoshimori;H. Watanabe;C. Paz de Araujo - Phys. Stat. Sol.(a) v.151 Retention and Imprint Properties of Ferroelectric Thin Films J.J. Lee;C.L. Thio;S.B. Desu
- Jpn. J. Appl Phys v.34 no.9b Preparation of Ferroelectric Thin Films of Bismuth Layer Structured Compounds H Watanabe;T. Mihara;H. Yoshimori;C. Paz de Araujo
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Ferroelectricity in the Compound
$Ba_2Bi_4Ti_5O_{18}$ B. Aurivillus;P.H. Fang -
Phys. Rev.
v.126
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Ferroelectricity in the Compound
$Bi_4Ti_3O_{12}$ P.H. Fang;C.R Robbins;B. Aurivillius - J Am Ceram Soc. v.45 no.4 Crystal Chemistry of Mixed Bismuth Oxides with Layer-Type Structure E.C. Subbarao
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Structure Refinement of Commensulately Modulated Bismuth Strontium Tantalate.
$Bi_2SrTa_2O_9$ A D. Rae -
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Preparation and Ferroelectric Properties of
$SrBi_2Ta_2O_9$ Thin Film K. Amanuma;T Hase;Y. Miyasaka - Jpn J Appl Phys v.34 no.9B Preparation of B₁-Based Ferroelectric Thin Films by Sol-Gel Method T Atsuki;N. Soyama;T. Yonezawa;K. Ogi
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