The fabrication of InGaAsP/InP RWG(ridge waveguide) MQW-LD by the vertical LPG system

수직형 LPE장치를 이용한 InGaAsP/InP RWG(Ridge Waveguide) MQW-LD제작

  • 박윤호 (한국해양대학교 전자통신공학과) ;
  • 오수환 (한국해양대학교 전자통신공학과) ;
  • 하홍춘 (한국해양대학교 전자통신공학과) ;
  • 안세경 (한국해양대학교 전자통신공학과) ;
  • 이석정 (한국해양대학교 전자통신공학과) ;
  • 홍창희 (한국해양대학교 전자통신공학과) ;
  • 조호성 (전자통신연구소 화합물반도체 연구부)
  • Published : 1996.06.01

Abstract

RWG MQW-LD has been made with our vertical LPE system from the optimal design condition for the RWG MQW-LD to be activated as weakly index-guided LD. Through several experiments we have established the growth condition which can be used through to grow the MQW-DH wafer and to control the thickness of MQW layer to ~200$\AA$. 4 ${\mu}{\textrm}{m}$-thickness of the ridge pattern has been formed through the photolithographic process on the MQW-DH wafer grown by the former condition, and then we have fabricated the RWG MQW-LD using it. From the result of measuring the electro-optical characteristics we can make sure that it can be lasing as lasing as laterally single mode at even more than $2.7I_{th}$.

본 연구에서는 RWG MQW-LD가 weakly index-guided LD로 동작하기 위한 최적 걸게조건으로부터, 수직형 LPE장치를 사용하여 RWG MQW-LD를 제작하였다. 먼저 수회의 실험을 통해 MQW-DH웨이퍼를 photolithofraphy공정을 통해 폭이 4.mu.m인 ridge 패턴을 형성시켜 RWG MQW-LD를 제작하였으며 전기광학적 특성을 조사한 결과 I=2.7I$_{th}$ 이상에서도 측방향 단일모드 동작함을 알 수 있었다.

Keywords

References

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