Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 33A Issue 12
- /
- Pages.65-71
- /
- 1996
- /
- 1016-135X(pISSN)
A novel in-situ vacuu encapsulted lateral field emitter triode
자체적으로 진공을 갖는 수평형 전계 방출 트라이오드
Abstract
A novel lateral field emitter triode has been designed and fabricated. It has self-vacuum environmets and low turn-on voltage, so that the chief problems of previous field emission devices such as additional vacuum sealing process and high turn-on voltage are settled. An in-situ vaccum encapsulation empolying recessed cavities by isotropic RIE (reactive ion etch) method and an electron beam evaporated molybdenum vacuum seals are implemented to fabricate the new field emitter triode. The device exhibits low turn-on voltage of 7V, stabel current density of 2.mu.A/tip at V
Keywords