Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 33A Issue 10
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- Pages.139-143
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- 1996
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- 1016-135X(pISSN)
Optical modulation characteristics of resonant tunneling diode oscillator
빛에 의한 공명투과다이오드 진동자의 주파수 변조 특성
Abstract
We report on the static and dynamic characteristics of optically modulated resonant tunneling diode oscillator (RTDO) formed in double-barrier quantum-well structure. Under the illumination of Ti:Sapphire laser, the dc current-voltage (I-V) curves of RTDO shifted towared lower voltages. This characteristic was found to odify the series resistance, negtive differential resistance, capacitance, and the inductance of the RTDO. As a result, the resonant frequency of TRDO centered at 5.302 GHz was found to decrease about 20 MHz under the laser illumination. At a constnat bias voltage, the oscillation frequency decreased linearly as the laser power was increased.
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