Fabrication of the silicon field emitter araays with H$_{2}$O densified oxide as a gate insulator

H$_{2}$O 분위기에서 치밀화시킨 (densified) 산화막을 게이트 절연막으로 갖는 실리콘 전계방출소자의 제작

Gate insulator for Si field emitter is usually formed by e-beam evaporation. However, the evaported oxide requires densification for a stable process and a reduction of gate leakage which results from its Si-rich and nonstoicheiometric structure. In this study, we have developed the process technology able to densify the evaporated oxide in H$_{2}$O ambient. Using this process, we have fabricted thefield emitter array with 625 emitters per pixel, of which gate hole diameter is 1.4.mu.m, for the pixel, anode current of 14.3.mu.A was extracted at a gate bias of 100V and gate leakage was about 0.27% of the total emission current.