Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 32A Issue 6
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- Pages.75-81
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- 1995
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- 1016-135X(pISSN)
Fabrication of 1.3$\mu$ m InGaAsP/InP uncooled-LD using low pressure MOVPE
저압 유기금속 기상화학증착법에 의한 1.3$\mu$ m InGaAsP/InP uncooled-LD의 제작
Abstract
InGaAsP/InP uncooled LDs emitting at 1.3
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