Journal of the Korean Vacuum Society (한국진공학회지)

The Korean Vacuum Society (한국진공학회)
권호 표지

Effects of TCA Incorporation During Annealing Process on the Properties of Oxygen Ion Implanted Silicon Wafers

  • Bae, Y.H (Electronic divice & system research Lab. Research Institute of Industrial Science & Technology) ;
  • Kwon, Y.K. (Electronic divice & system research Lab. Research Institute of Industrial Science & Technology) ;
  • Kim, K.I. (Electronic divice & system research Lab. Research Institute of Industrial Science & Technology) ;
  • Chung, W.J.
  • Published : 1995.06.01
Download PDF
⟨ Previous Next ⟩

Abstract

The effects of TCA incorporation during annealing process on the SIMOX quality is studied. Silicon wafers are implanted with heavy dose of oxygen ions, and are annealed at $1300^{\circ}C$ for 4 hours. The annealing process is splitted into three conditions due to some differences of low temperature preliminary annealing step which are without pre-annealing step. The specimens are analyzed by several methods, such as AES, XTEM, and TRXFA. TCA incorporation during pre-annealing step is effective in dislocation density reduction and heavy metal content reduction.

Keywords