한국진공학회지 (Journal of the Korean Vacuum Society)
- 제4권S1호
- /
- Pages.108-112
- /
- 1995
- /
- 1225-8822(pISSN)
The Low Resistivity Gate Metals Formation of Thin Film Transistors by Selective CVD
- Park, S.J. (APEX Co.) ;
- Bae, N.J. (APEX Co.) ;
- Kim, S.H. (APEX Co.) ;
- Shin, H.K. (UP Chem.) ;
- Choi, J.S. (HongIk Univ.) ;
- Yee, J.G.Choi, S.Y. (Kyungpook Nat'l Univ.Kyungpook Nat'l Univ.)
- 발행 : 1995.02.01
초록
Copper and aluminum selective deposition using (hfac)Cu(VTMS) and DMEAA precursors were performed in a warm-wall low pressure chemical vapour deposition reactor. The films of Cu and AI deposited on Corning 7059 glass and quartz with pattern of Cr seed metal. Selective deposition can be achieved at a pressure range of from 10-1 to 10 torr and substrate temperature range of 150-25
키워드