HALL EFFECT AND RESISTIVITY OF AMORPHOUS $Fe_{83-x}Zr_{7}B_{10}Nb_{x}$ ALLOYS

  • Lee, Soo-Hyung (Department of Physics, Chongju Univ.) ;
  • Yu, Seong-Cho (Department of Physics, Chungbuk National Univ.) ;
  • Xu, Jun-Hau (Department of Condensed Matter Physics, Royal Institute of Technology) ;
  • Rao, K.V. (Department of Condensed Matter Physics, Royal Institute of Technology) ;
  • Noh, Tae-Hwan (Division of Advanced materials, Korea Institute of Science and Technology) ;
  • Kang, Il-Koo (Division of Advanced materials, Korea Institute of Science and Technology) ;
  • Rhie, Kungwon (Department of Physics, Korea University)
  • Published : 1995.10.01

Abstract

The effect of small addition of Nb on the electrical resistivity and Hall coefficient of the amorphous $Fe_{83}Zr_{7}B_{10}$ alloy and annealed ones below the crystallization temperature were investigated, which has been considered to be suitable for high frequency core material. At room temperature, their resistivities $\rho$ and the spontaneous Hall coefficients $R_{s}$ are $~1.6\;{\mu}{\Omega}m$ and $~3{\times}10^{-8}m^{3}/As$, respectively. $R_{s}$ and $\rho$ are decreased with increasing temperature from 100 K to room temperature. Side-jump effect was adopted to analyze the effect of the small variation of concentration and annealing. The quantity of $R_{s}/{\rho}^{2}$ at room temperature, which is directly related to the electronic structure of the mother alloy, remained almost a constant except as quenched one as it can be predicted from the side-jump effect. We suggested the temperature dependence of $R_{s}/{\rho}^{2}$ can be compared to Ms{T}.

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