References
- Solid State Electronic Devices(3rd ed.) B.G. Streetman
-
Phys. Rev. Lett.
v.54
Strain-induced two-dimensional electron gas in selectively doped S₁/
$Si_x Ge_{1-x}$ superlattices G. Abstreiter;H. Brugger;T. Wolf -
Appl. Phys. Lett.
v.57
no.10
Intense photoluminescence between 1.3 and 1.8μm from strained
$Si_{1-x} Ge_x$ Si1-xGex J.P. Noel;N.L. Rowell;D.C. Houghyon;D.D. Perovic - Appl. Phys. Lett. v.51 no.19 1.3μm light-emitting diode from silicon electron irradiated at its damage threshold L.T. Canham;K.G. Barraclough;D.J. Robbins
-
Philos. Mag.
v.B44
no.137
Photoluminescence and optical properties of plasma-deposited amorphous
$Si_x C_{1-x}x$ alloys R.S. Sussman;R. Ogden -
J. Appl. Phys.
v.52
no.6
Photoluminescence in the amorphous system
$SiO_x$ R. Carius;R. Fischer;E. Holzenkampfer;J. Stuke - Appl. Phys. Lett v.42 no.4 Efficient visible photoluminescence in the binary α-Si:H? alloy system D.J. Wolford;J.A. Reimer;B.A. Scott
- Appl. Phys. Lett. v.59 no.25 Intense photoluminescence from laterally anodized porous silicon K.H. Jung;S. Shih;T.Y. Hsieh;D.L. Kwong;L.T. Lin
- Appl. Phys. Lett. v.57 no.10 Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers L.T. Canham
- Bell syst. Tech. J. v.35 no.333 Electrolytic shaping of germanium and silicon A. Uhlir
- J. Electrochem. Soc. v.137 no.9 Porous silicon oxide layer formation by the electrochemical treatment of a porous silicon layer M. Yamana;N. Kashiwazaki;A. Kinoshita;T. Nakano;M. Yamamoto;C.W. Walton
- 센서학회지 v.1 no.1 HF 양극반응을 이용한 단결정 실리콘 미세구조의 제조 조찬섭;심준환;이석수;이종현
- Appl. Phys. Lett. v.46 no.1 Microstructure and formation mechanism of porous silicon M.I.J. Beale;N.G. Chew;M.J. Uren;A.G. Cullis;J.D. Benjamin
- J. Cryst. Growth v.73 no.622 An experimental and theoretical study of the formation and microstructure of porous silicon M.I.J. Beale;J.D. Benjamin;M.J. Uren;N.G. Chew;A.G. Cullis
- J. Phys. C v.17 Optical studies of the structure of porous silicon films in p-type degenerate and non-degenerate silicon C. Pickering;M.I.J. Beale;D.J. Robbins;P.J. Pearson;R. Greef
- J. Electron Mater v.17 no.533 A theoretical model of the morphologies of porous silicon R.L. Smith;S.F. Chuang;S.D. Collins
- Phys. Rev. v.A39 no.10 Generalized model for the diffusion-limited aggregation and Eden models of cluster growth R.L. Smith;S.D. Collins
- Appl. Phys. Lett. v.58 no.8 Porous silicon formation: A quantum wire effect V. Lehmann;U. Gosele
- Appl. Phys v.A53 no.1 Properties of silicon-electrolyte junctions and their application to silicon charaterization H. Foll
- Appl. Phys. Lett. v.32 no.12 Photoluminescence recovery in rehydrogenated amorphous silicon J.I. Pankove
- Appl. Phys. Lett. v.60 no.14 Correlation between silicon hydride species and the photoluminescence intensity of porous silicon C. Tsai;K.H. Li;D.S. Kinosky;R.Z. Qian;T.C. Hsu;J.T. Irby;S.K. Banerjee;A.F. Tasch;J.C. Campbell;B.K. Hance;J.M. White
- App. Phys. Lett. v.59 no.22 Thermal treatment studies of the photoluminescence intensity of porous silicon C. Tsai;K.H. Li;J. Sarathy;S. Shih;J.C. Campbell;B.K. Hance;J.M. White
- J. Appl. Phys. v.72 no.8 The photoluminescence spectra of porous silicon boiled in water K.H. Li;C. Tsai;S. Shih;T. Hsu;D.L. Kwong;J.C. Campbell
- J. Appl. Phys. v.62 no.3 The kinetics and mechanism of oxide layer formation from porous silicon formed on p-Si substrate J.J. Yon;K. Barla;R. Herino;G. Bomchil
- Jpn. J. Appl. Phys. v.29 no.2 Structural change of crystalline porous silicon with chemisorption T. Ito;T. Yasumatsu;H. Watabe;A. Hiraki
- Nature v.353 no.335 Visible light emission due to quantum size effects in highly porous crystalline silicon A.G. Cullis;L.T. Canham
- Appl Phys. Lett. v.60 no.19 Microstructural investigations of light-emitting porous Si layer T. George;M.S. Anderson;W.T. Pike;T.L. Lin;R.W. Fathauer;K.H. Jung;D.L. Kwong
- Thin Solid Films v.125 no.1/2 Optical properties of porous silicon films C. Pickering;M.I.J. Beale;D.J. Robbins;P.J. Pearson;R. Greef
- J. Appl. Phys. v.71 no.9 Time-resolved photoluminescence in anodically etched silicon T.P. Pearsall;J.C. Adams;J.E. Wu;B.Z. Nosho;C. Aw;J.C. Patton
- J. Appl. Phys. v.70 no.1 Atmospheric impregnation of porous silicon at room temperature L.T. Canham;M.R. Houlton;W.Y. Leong;C. Pickering;J.M. Keen
- Transmission Electron Microscopy of Materials G. Thomas;M.J. Goringe