Bulletin of the Korean Chemical Society

Korean Chemical Society (대한화학회)
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Investigation of Initial Formation of Aluminum Nitride Films by Single Precursor Organometallic Chemical Vapor Deposition of$[Me_{2}Al(\mu-NHR)]_{2}\;(R=^{i}Pr,\;^{t}Bu)$

  • Sung Myung Mo (Inorganic Materials Division, Korea Research Institute of Chemical Technology) ;
  • Jung Hyun Dam (Department of Chemistry, Korea Advanced Institute of Science and Technology) ;
  • Lee June-Key (Department of Chemistry, Korea Advanced Institute of Science and Technology) ;
  • Kim Sehun (Department of Chemistry, Korea Advanced Institute of Science and Technology) ;
  • Park Joon T. (Inorganic Materials Division, Korea Research Institute of Chemical Technology) ;
  • Kim Yunsoo (Department of Chemistry, Korea Advanced Institute of Science and Technology)
  • Published : 1994.01.20
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Abstract

The organometallic chemical vapor deposition of single precursors, $[Me_2Al({\mu}-NHR)]_2\;(R=^iPr,\;^tBu)$, for alumininum nitride thin films has been investigated to evaluate their poroperties as potential precursors. In chemical vapor deposition processes the gas phase products scattered from a Ni(100) substrate were analyzed by mass spectrometry and the deposited films were characterized by X-ray photoelectron spectroscopy (XPS). The optimum temperatures for the formation of AlN films have been found to be between 700 K and 800 K. Carbon contamination of the films seems to be attributed mainly to the methyl groups bonded to the aluminum atoms. It is apparent that $^tBu$ group is better than $^iPr$ group as a substituent on the nitrogen atom of the single precursors for the AlN thin film formation.

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