Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 31A Issue 9
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- Pages.114-120
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- 1994
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- 1016-135X(pISSN)
Fabrication and Characterization of GaAs/AlGaAs HEMT Device
GaAs/AlGaAs HEMT소자의 제작 및 특성
Abstract
We have been successfully fabricated the low nois HEMT device with AlGaAs and GaAs structure. The epitazial layer with n-type AlgaAs and undoped GaAs was grown by molecular beam epitaxy(MBE) system. Ohmic resistivity of the ource and drain contact is below 5
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