Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 31A Issue 8
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- Pages.91-99
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- 1994
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- 1016-135X(pISSN)
Characteristics of $Si^+$ self implant Induced Damage and Its Annealing Behavior
$Si^+$ 이온주입된 Si 기판의 결함형성 및 회복에 관한 연구
Abstract
Damage induced by Si ion implantation and its annealing behavior during rapid thermal annealing were investigated by cross-sectional TEM (transmission electron microscopy) and RB ( Rutherford backscattering) spectrum. 150keV and 50keV Si ions were implanted in Si (100) at room temperature with doses of 2
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