Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)
- Volume 4 Issue 1
- /
- Pages.42-45
- /
- 1994
- /
- 1225-1429(pISSN)
- /
- 2234-5078(eISSN)
Low temperature solution growth of silicon on foreign substrates
이종기판을 사용한 저온에서의 실리콘 박막 용액 성장법
- Soo Hong Lee (Energy/Environment Lab., Materials & Device Research Center, Samsung Advanced Institute of Technology, Suwon 440-600, Korea) ;
- Martin A. Green (Center for Photovoltaic Devices and Systems, University of New South Wales, Kensington, N.S.W. 2033, Australia)
- Published : 1994.03.01
Abstract
Deposition of silicon on pretreated sapphire and glass substrates has been investigated by the solution growth method at low temperatures. An average 14
금 비스무스 용매를 사용하여 실리콘 박막을 사파이어, 보로실리케이트 그라스 기판상에 성장시켰다. 사파이어의 경우
Keywords