Hydrodynamic model을 이용한 Submicron MOSFET의 Simulation

Simulation of Submicron MOSFET Using Hydrodynamic Model

In this paper, we have developed a submicron Si MOSFET simulator, which is physically based on the hydrodynamic energy transport mode. The simulator was used to investigate the nonstationary transport effects and the transient phenomena in submicron Si MOSFET's. It is found that the velocity overshoot and the carrier heating are dominant transport mechanism near the drain end of the channel and the transient phenomena is more retained in a long channel MOSFET.